Home > Single Bipolar Transistors >

Compact Plastic Encapsulated Transistor for Medium Power Switching and Amplification GOODWORK MMDT5551

Product Categories

Bipolar Transistor Arrays [120]
Bridge Rectifiers [1296]
JFETs [73]
Single Bipolar Transistors [2284]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [536]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1334]
SCRs [158]
SCRs - Modules [48]
TRIACs [535]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

Compact Plastic Encapsulated Transistor for Medium Power Switching and Amplification GOODWORK MMDT5551

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 50nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 100MHz

Current - Collector(Ic) : 600mA

Collector - Emitter Voltage VCEO : 150V

Description : Bipolar (BJT) Transistor 150V 600mA 100MHz 300mW Surface Mount SOT-363

Mfr. Part # : MMDT5551

Model Number : MMDT5551

Package : SOT-363

Contact Now

MMDT5551 - Complementary Plastic Encapsulated Transistor

The MMDT5551 is a complementary transistor designed for medium power amplification and switching applications. It features a small surface mount package, making it ideal for space-constrained designs. Its complementary nature to the MMDT5551DW offers design flexibility.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Plastic Encapsulated
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				-160	V
Collector-Emitter Voltage	VCEO				-150	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current	IC				-600	mA
Collector Power Dissipation	PC	(Ta=25)			300	mW
Thermal Resistance Junction to Ambient	RJA				625	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=-100A, IE=0			-160	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-1mA, IB=0			-150	V
Emitter-base breakdown voltage	V(BR)EBO	IE=-10A, IC=0			-5	V
Collector cut-off current	ICBO	VCB=-120V, IE=0			-50	nA
Emitter cut-off current	IEBO	VEB=-3V, IC=0			-50	nA
DC current gain	hFE	VCE=-5V, IC=-1mA	50
DC current gain	hFE	VCE=-5V, IC=-10mA		60
DC current gain	hFE	VCE=-5V, IC=-50mA			300
Collector-emitter saturation voltage	VCE(sat)	IC=-50mA, IB=-5mA			-0.5	V
Collector-emitter saturation voltage	VCE(sat)	IC=-10mA, IB=-1mA		-0.2		V
Collector-emitter saturation voltage	VCE(sat)	IC=-50mA, IB=-5mA			-1	V
Base-emitter saturation voltage	VBE(sat)	IC=-10mA, IB=-1mA		-0.5		V
Base-emitter saturation voltage	VBE(sat)	IC=-50mA, IB=-5mA			-1	V
Transition frequency	fT	VCE=-10V,IC=-10mA , f=100MHz			100	MHz
Collector output capacitance	Cob	VCB=-10V, IE=0, f=1MHz			6	pF

2506251635_GOODWORK-MMDT5551_C49242201.pdf

Wholesale Compact Plastic Encapsulated Transistor for Medium Power Switching and Amplification GOODWORK MMDT5551 from china suppliers

Compact Plastic Encapsulated Transistor for Medium Power Switching and Amplification GOODWORK MMDT5551 Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!